小信号 MOSFET,20V,630mA,375 mΩ,双互补 SC−88/SC70−6/SOT−363

Obsolete

概览

功率 MOSFET,20V,+0.63/-0.82A,SC-88 互补

  • Leading Edge Trench Technology for Low RDS(on)
  • Reduced Gate Charge
  • Independently Connected Devices
  • Low Profile, 2x2 mm

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可订购器件:

2

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTJD3158CT1G

Obsolete

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

Complementary

PowerTrench® T1

NA

Small Signal

Standard

0

NA

0

20

-

12

-

0.63

0.27

NA

-

-

-

NA

-

-

-

-

Price N/A

More Details

NTJD3158CT2G

Obsolete

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

Complementary

PowerTrench® T1

NA

Small Signal

Standard

0

NA

0

20

-

12

-

0.63

0.27

NA

-

-

-

NA

-

-

-

-

Price N/A

More Details

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