单 P 沟道,沟槽功率 MOSFET,-20V,-4.2A,60mΩ

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沟槽功率 MOSFET,-20 V,-4.2 A,单 P 沟道,SC-88

  • High Side Load Switch

  • Cell Phones
  • Computing
  • Digital Cameras
  • MP3s
  • PDAs

  • Leading Trench Technology for Low RDS(on) Extending Battery Life
  • SC-88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, same as SC-70-6
  • Gate Diodes for ESD Protetion

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTJS4151PT1G

Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

-20

-

12

1.2

3.3

1

70

47

-

10

850

2.8

0.23

160

110

$0.0889

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