单 P 沟道,增强模式功率 MOSFET,-20V,-10A,14mΩ

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功率 MOSFET,−10 A,-20 V,P 沟道增强模式,单 SOIC−8 封装

  • Power Management in Portable and Battery-Powered Products

  • Cellular and Cordless Telephones
  • PCMCIA Cards

  • Ultra Low RDS(on)
  • Higher Efficiency Extending Battery Life
  • Logic Level Gate Drive
  • Miniature SO-8 Surface Mount Package
  • Diode Exhibits High Speed, Soft Recovery
  • Avalanche Energy Specified
  • SOIC-8 Mounting Information Provided

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMS10P02R2

CAD Model

Pb

A

H

P

SOIC-8

1

235

REEL

2500

N

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

NA

0

-20

-

12

-1.2

-10

0.6

20

14

12.2

48

3100

17

0.075

1100

475

Price N/A

More Details

NTMS10P02R2G

Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

P-Channel

PowerTrench® T1

SOIC-8N

Small Signal

Logic

0

NA

0

-20

-

12

-1.2

-10

0.6

20

14

12.2

48

3100

17

0.075

1100

475

$0.5876

More Details

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