Small Signal MOSFETs | NTMS4801N

功率 MOSFET，30V，12A，9mΩ，单 N 沟道，SO-8

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数据表

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概览

这是一个 30 V N 沟道功率 MOSFET。

  • DC-DC Converters
  • Synchronous MOSFET
  • Printers
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

NTMS4801NR2G

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已停产

CAD Model

Pb

A

H

P

SOIC-8

751-07

1

260

REEL

2500

No

N-Channel

PowerTrench® T1

SOIC-8N

Small Signal

Logic

0

NA

0

30

9

20

2.5

12

1.41

-

12.5

24

25

1630

4.4

-

288

150

Price N/A

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可靠性数据

Die Related Summary Data

Device: NTMS4801NR2G

Equivalent to wafer fab process: TRENCH FET LEGACY

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

5

25938380737

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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