单 P 沟道增强模式功率 MOSFET -20V,-5.4A,33mΩ

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概览

这是一款 20 V P 沟道功率 MOSFET。

  • Power Management in Portable and Battery-Powered Products

  • Computers
  • Printers
  • PCMCIA Cards
  • Cellular & Cordless Telephones

  • High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency
  • Miniature SO-8 Surface Mount Package--Saves Board Space
  • Diode Exhibits High Speed with Soft Recovery
  • IDSS Specified at Elevated Temperature
  • Drain-to-Source Avalanche Energy Specified
  • Mounting Information for the SOIC-8 Package is Provided
  • RoHS Compliant

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可订购器件:

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMS5P02R2

CAD Model

Pb

A

H

P

SOIC-8

1

235

REEL

2500

N

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

NA

0

-20

-

10

-1.25

-5.4

2.5

48

33

48

4

1375

7

0.03

510

200

Price N/A

More Details

NTMS5P02R2G

Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

P-Channel

PowerTrench® T1

SOIC-8N

Small Signal

Logic

0

NA

0

-20

-

10

-1.25

-5.4

2.5

48

33

48

4

1375

7

0.03

510

200

$0.354

More Details

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