Small Signal MOSFETs | NTR2101P

单 P 沟道小信号 MOSFET -8V，-3.7A，52mΩ

量产中

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概览

这是一款 8.0 V P 沟道功率 MOSFET。

  • High Side Load Switch
  • DC-DC Conversion
  • Cell Phone, Notebook, PDAs, ect.
  • Leading Trench Technology for Low RDS(on)
  • -1.8 V Rated for Low Voltage Gate Drive
  • SOT-23 Surface Mount for Small Footprint (3x3mm)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

NTR2101PT1G

联系销售

量产中

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

No

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

NA

0

-8

-

8

1

3.7

0.96

52

39

7.5

12

1173

2.5

-

289

218

$0.0868

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可靠性数据

Die Related Summary Data

Device: NTR2101PT1G

Equivalent to wafer fab process: TRENCH FET LEGACY

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

5

25938380737

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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