单 P 沟道功率 MOSFET -20V,-1.37A,120mΩ

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概览

这是一款 20 V P 沟道功率 MOSFET。

  • High Side Load Switch
  • Charging Circuit
  • Single Cell Battery Applications

  • Cell Phones
  • Digital Cameras
  • PDAs

  • Leading -20 V Trench for Low RDS(on)
  • -2.5 V Rated for Low Voltage Gate Drive
  • SC-70 Surface Mount For Small Footprint (2x2 mm)

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTS4101PT1

CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

1

235

REEL

3000

N

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

NA

0

-20

-

8

1.5

1.37

0.329

104

83

1.2

6.4

603

1.5

4.25

90

62

Price N/A

More Details

NTS4101PT1G

Active

CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-3

Small Signal

Logic

0

NA

0

-20

-

8

1.5

1.37

0.329

104

83

1.2

6.4

603

1.5

4.25

90

62

$0.0587

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