双 N 沟道,小信号 MOSFET,带 ESD 保护,60V,310mA,1.6Ω

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概览

这是一个 60 V N 沟道功率 MOSFET。

  • Load/Power Switches
  • Driver Circuits
  • Battery Management/Battery Operated Systems

  • Relays, Lamps, Displays, Memories, etc.
  • Cell Phones, Digital Cameras, PDAs, Pagers, etc.

  • Low RDS(on) Improving System Efficiency
  • Low Threshold Voltage
  • ESD Protected Gate
  • Small Footprint 1.6 x 1.6 mm

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可订购器件:

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTZD5110NT1G

Active

CAD Model

Pb

A

H

P

SOT-563

1

260

REEL

4000

Y

N-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

60

Q1=Q2=1600

20

2.5

0.3

0.25

-

Q1=Q2=2500

-

0.7

24.5

0.1

-

4.2

2.2

$0.0609

More Details

NTZD5110NT5G

CAD Model

Pb

A

H

P

SOT-563

1

260

REEL

8000

N

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

NA

0

60

Q1=Q2=1600

20

2.5

0.3

0.25

-

Q1=Q2=2500

-

0.7

24.5

0.1

-

4.2

2.2

Price N/A

More Details

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