Small Signal MOSFETs | NUS5530MN

集成式功率 MOSFET，带 PNP 低饱和压开关晶体管

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概览

此集成器件将 20 V P 沟道与 PNP 硅低饱和压开关晶体管进行组合，提供了新的安全性和板空间减少水平。 这种新型集成产品能效和准确率更高，适用于电池供电便携式电子元件。

  • Power Management in Portable and Battery-Powered Products
  • Cellular and Cordless Telephones
  • PCMCIA Cards
  • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
  • Higher Efficiency Extending Battery Life
  • Logic Level Gate Drive (MOSFET)
  • Performance DFN Package

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

NUS5530MNR2G

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Pb

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P

DFN-8

506AL

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Small Signal

Standard

0

NA

0

-

-

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NA

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可靠性数据

Die Related Summary Data

Device: NUS5530MNR2G

Equivalent to wafer fab process: ZENER

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

ZENER

0

19743437079

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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