Small Signal MOSFETs | NVE4153N

单 N 沟道，小信号 MOSFET，带 ESD 防护，20V，915mA，230mΩ

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概览

适用于低功率应用的汽车用功率 MOSFET。 20V，915mA，230mΩ，单 N 沟道，SC-89，带 ESD 保护。通过 AEC-Q101 认证的 MOSFET，符合生产件批准程序 (PPAP)，适用于汽车应用。

  • Load/Power Switches
  • Power Supply Converter Circuits
  • Battery Management
  • Portable Devices

  • Cell Phones
  • PDAs
  • Digital Cameras
  • Pagers

  • Low RDS(on) Improving System Efficiency
  • Low Threshold Voltage, 1.5V Rated
  • ESD Protected Gate
  • AEC−Q101 Qualified and PPAP Capable

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVE4153NT1G

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CAD Model

Pb

A

H

P

SC-89-3

463C-02

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

SC-3

Small Signal

Logic

0

NA

0

20

-

6

1.1

0.915

0.3

170

127

-

1.82

110

0.42

-

16

12

$0.1963

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可靠性数据

Die Related Summary Data

Device: NVE4153NT1G

Equivalent to wafer fab process: TRENCH FET LEGACY

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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