Small Signal MOSFETs | NVGS5120P

单P 沟道功率 MOSFET -60V，-2.9A，111mΩ

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概览

适用于低功率应用的汽车用功率 MOSFET。-60V -2.9A，111 Ω，单 P 沟道，TSOP-6，逻辑电平。通过 AEC-Q101 认证的 MOSFET，符合生产件批准程序 (PPAP)，适用于汽车应用。

  • Load Switch
  • Power Switch for Printer and Communication Equipments
  • Low Current Inverter and DC-DC

  • Infotainment systems. Radios. Navigation systems. Clusters

  • Leading Edge Trench Technology for Low RDS(on)
  • 4.5 V Gate Rating
  • AEC−Q101 Qualified and PPAP Capable

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVGS5120PT1G

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CAD Model

Pb

A

H

P

TSOP-6

318G-02

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

SC-6

Small Signal

Standard

0

NA

0

-60

111

20

-3

-3

1.5

-

-

-

18.1

942

3.6

15.1

72

48

$0.4498

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可靠性数据

Die Related Summary Data

Device: NVGS5120PT1G

Equivalent to wafer fab process: TRENCH FET LEGACY

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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