Small Signal MOSFETs | NVJD4152P

双 P 沟道沟槽小信号 ESD 保护 MOSFET 20V，0.88A，260mΩ

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适用于低功率应用的汽车用功率 MOSFET。20V，260 mΩ，双 P 沟道 MOSFET，带 ESD 防护，采用 SC-88 封装。通过 AEC-Q101 认证的 MOSFET，符合生产件批准程序 (PPAP)，适用于汽车应用。

  • Load/Power Management
  • Charging Circuits
  • Load Switching

  • Automotive Infotainment Modules
  • Cell Phones
  • Computing
  • Digital Cameras
  • MP3s and PDAs

  • Leading Trench Technology for Low RDS(ON) Performance
  • Small Footprint Package (SC70−6 Equivalent)
  • ESD Protected Gate
  • AEC−Q101 Qualified and PPAP Capable

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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NVJD4152PT1G

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CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

-20

215

12

-1.2

0.88

0.272

-

345

1.3

2.2

155

0.65

-

25

18

Price N/A

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可靠性数据

Die Related Summary Data

Device: NVJD4152PT1G

Equivalent to wafer fab process: TRENCH FET LEGACY

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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