双 P 沟道沟槽小信号 ESD 保护 MOSFET 20V,0.88A,260mΩ

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适用于低功率应用的汽车用功率 MOSFET。20V,260 mΩ,双 P 沟道 MOSFET,带 ESD 防护,采用 SC-88 封装。通过 AEC-Q101 认证的 MOSFET,符合生产件批准程序 (PPAP),适用于汽车应用。

  • Load/Power Management
  • Charging Circuits
  • Load Switching

  • Automotive Infotainment Modules
  • Cell Phones
  • Computing
  • Digital Cameras
  • MP3s and PDAs

  • Leading Trench Technology for Low RDS(ON) Performance
  • Small Footprint Package (SC70−6 Equivalent)
  • ESD Protected Gate
  • AEC−Q101 Qualified and PPAP Capable

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVJD4152PT1G

Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

-20

215

12

-1.2

0.88

0.272

-

345

1.3

2.2

155

0.65

-

25

18

Price N/A

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