双 P 沟道,功率 MOSFET,-60V,-2.5A,137mΩ

Obsolete

概览

此功率 MOSFET 使用安森美半导体的沟槽工艺生产,专门用于最大程度减小门极电荷,降低导通电阻。此器件适用于具有低门极电荷驱动或低导通电阻要求的应用。

  • Motor Driver

  • Fan Motor, Fan Motor for MFP

  • Low-Profile Package
  • ESD Diode-Protected Gate
  • RoHS Compliance
  • Low On-Resistance
  • 4V drive

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可订购器件:

2

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

VEC2315-TL-H

CAD Model

Pb

A

H

P

SOT-28FL / VEC-8

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-28FL-8

Small Signal

Logic

0

Dual

0

-60

Q1=Q2=137

20

-2.6

-2.5

0.9

-

Q1=Q2=180

-

11

420

2

-

54

44

Price N/A

More Details

VEC2315-TL-W

CAD Model

Pb

A

H

P

SOT-28FL / VEC-8

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-28FL-8

Small Signal

Logic

0

Dual

0

-60

Q1=Q2=137

20

-2.6

-2.5

0.9

-

Q1=Q2=180

-

11

420

2

-

54

44

Price N/A

More Details

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