IGBT Modules | NCG225L75NF8M1

IGBT 750 V, 225 A Field Stop Trench Gen4 (FS4) Bare Die. Pairing with NCD225E75F8M1

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NCG225L75NF8M1 is a 750 V, 224 A rated Field Stop 4 (FS4) Trench IGBT bare die with a die size of 10 mm x 10 mm. it's suitable for back side and double side sintering attachment inside traction module

  • EV/HEV Traction Modules
  • General Power Modules

  • EV
  • HEV

  • AEC-Q101 rev. D qualified
  • Maximum junction temperature 175°C
  • Positive temperature coefficient
  • Easy paralleling
  • Very low saturation voltage: VCE(SAT) = 1.45 V (Typ.) @ IC = 225 A
  • Short Circuit rated
  • Optimized for motor control applications

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NCG225L75NF8M1

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NA

0

MTFRM

1

N

~NA~

750

225

1.65

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~NA~

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可靠性数据

Die Related Summary Data

Device: NCG225L75NF8M1

Equivalent to wafer fab process: IGBT

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平均故障间隔时间/平均无故障时间（按小时计算）

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IGBT

1

2930462991

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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