NXH80B120L2Q0: 功率集成模块，双升压，1200 V，40 A，IGBT + 1200 V，30 A 硅二极管
NXH80B120L2Q0SG 是一款功率模块，包含一个双升压级，由两个 40A/1200V IGBT、两个 30A/1200V 硅二极管 和两个用于这些 IGBT 的 25A/1600V 防并联二极管组成。包括两个传统 25A/1600V 旁通整流器，用于涌入电流限制。包括一个板上热敏电阻。
特性
优势
IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2830 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
Si Rectifier Specification: VF = 2.4 V, IRRM = 53 A
Si Diode for moderate speed switching
Dual Boost 40 A / 1200 V IGBT + Si Rectifier Module
应用
终端产品
Solar Inverter Boost Stage
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2022年10月4-6日
