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NXH200T120H3Q2功率集成模块(PIM),包含一个T型中点钳位三电平逆变器,由两个带反向二极管的200A/1200V半桥IGBT、两个中性点100A/650V整流器、两个带反向二极管的150A/650V中性点IGBT、两个半桥150A/1200V整流器和一个负温度系数热敏电阻(NTC)组成。
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VBR Max (V)
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NXH200T120H3Q2F2SG
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NXH200T120H3Q2F2STG
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可靠性数据
Die Related Summary Data
Device: NXH200T120H3Q2F2STG
Equivalent to wafer fab process: SIC
产品技术
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
SIC
0
3855921070
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)