Si/SiC Hybrid Modules | NXH200T120H3Q2F2STNG

硅/碳化硅模块，T型NPC逆变器

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概览

NXH200T120H3Q2是一款功率集成模块（PIM），包含一个T型中点钳位三电平逆变器，由两个带反向二极管的200A/1200V半桥IGBT、两个中性点100A/650V二极管、两个带反向二极管的150A/650V中性点IGBT、两个半桥150A/1200V整流器和一个负温度系数热敏电阻（NTC）组成。

  • DC-AC级

  • 光伏逆变器
  • UPS
  • 储能系统

  • 低VCE(sat)快速开关IGBT，与中性点SiC二极管相结合
  • 低热阻基板
  • 焊接引脚
  • 热界面材料和镀镍DBC

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MSL Type

MSL Temp (°C)

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VBR Max (V)

Rated Current (A)

VCE(sat) Typ (V)

VF Typ (V)

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NXH200T120H3Q2F2STNG

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CAD Model

Pb

A

H

P

Q2

180AK

NA

0

BTRAY

36

F

Split T-Type

1200

200

1.86

1.5

$107.5596

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可靠性数据

Die Related Summary Data

Device: NXH200T120H3Q2F2STNG

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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