Si/SiC Hybrid Modules | NXH350N100H4Q2F2P1G

硅/碳化硅混合模块 – EliteSiC，I型NPC 1000V 350A IGBT，1200V 100A碳化硅二极管，Q2封装

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NXH350N100H4Q2是一款功率集成模块（PIM），包含一个I型NPC级，100A/1200V EliteSiC二极管用于中点钳位，350A/1000V IGBT用于外部IGBT，400A/1000V IGBT用于内部IGBT，用于IGBT的反向二极管的开关电流为170 A，另外包含一个板载式热敏电阻。

  • 1500V系统的DC-AC转换

  • 1500V分散式公用事业太阳能逆变器
  • 1500V储能系统

  • 模块带有低热阻抗基板
  • 可选焊接引脚或press-fit引脚
  • 1000V低VCE(sat) IGBT和1200V SiC二极管，用于DC-AC转换的优化组合

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NXH350N100H4Q2F2P1G

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Pb

A

H

P

Q2

180BH

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36

F

I-Type

1000

375

1.63

1.5

$138.8267

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NXH350N100H4Q2F2S1G

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Pb

A

H

P

Q2

180BS

NA

0

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36

F

I-Type

1000

375

1.63

1.5

$142.1392

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可靠性数据

Die Related Summary Data

Device: NXH350N100H4Q2F2S1G

Equivalent to wafer fab process: SIC

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平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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