Si/SiC Hybrid Modules | NXH80B120H2Q0

Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode

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The NXH80B120H2Q0SG is a power integrated module (PIM) containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • Solar Inverter Boost Stage
  • Solar Inverter
  • UPS
  • IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2180 uJ
  • 25 A / 1600 V Bypass and Anti−parallel Diodes
  • SiC Rectifier Specification: VF = 1.4 V
  • Solderable Pins
  • Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
  • Thermistor

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NXH80B120H2Q0SG

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Pb

A

H

P

Q0

180AJ

NA

0

BTRAY

24

N

Dual Boost

1200

15

2.1

1.4

Price N/A

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