Silicon Carbide (SiC) Modules | NXH006P120MNF2

碳化硅（SiC）模块 – EliteSiC，6 mohm SiC MOSFET，1200V 半桥2-Pack，F2封装

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概览

NXH006P120MNF2是一款半桥或2-Pack EliteSiC模块，带有2个6mohm 1200V SiC MOSFET开关和一个热敏电阻，采用F2封装。SiC MOSFET开关使用M1技术，由18V-20V栅极驱动。

  • DC-AC转换
  • DC-DC转换
  • AC-DC转换

  • UPS
  • 储能系统
  • 电车充电桩
  • 太阳能逆变器

  • 强固的M1平面SiC MOSFET技术
  • 18V至20V栅极驱动

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NXH006P120MNF2PTG

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Pb

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H

P

PIM36 56.70x42.50x12.00

180BY

NA

0

BTRAY

20

F

2-PACK

1200

6

EV Charging, Energy Infrastructure

$178.6947

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可靠性数据

Die Related Summary Data

Device: NXH006P120MNF2PTG

Equivalent to wafer fab process: SIC

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平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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