Silicon Carbide (SiC) Modules | NXH010P120M3F1PTG

Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

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The NXH010P120M3F1PTG is a power module containing 10 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with Alumina (AL2O3) DBC in an F1 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.

  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion

  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters

  • Excellent FOM [ = Rdson * Eoss ]
  • 15V to 18V Gate Drive
  • 10 mohm / 1200 V M3S SiC MOSFET Half−Bridge
  • These Devices are Pb−Free, Halide Free and are RoHS Compliant

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NXH010P120M3F1PTG

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Pb

A

H

P

PIM18 33.8x42.5 (PRESS FIT)

180BW

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0

BTRAY

28

F

Half-Bridge

1200

10

EV Charging, Energy Infrastructure

$73.4839

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