Silicon Carbide (SiC) Modules | NXVF6532M3TG01

SiC Power MOSFET Module 650V, 32mΩ H-Bridge

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SiC Power Module for OBC, 32mΩ, 650V, Full-Bridge in APM16 Al2O3 DBC Power Module with temperature sensing and the lowest thermal resistance for DC-DC and On Board Charger in xEV

  • PFC/CLLC for On−Board Charger in xEV Applications
  • On- Board Charger in EV-PHEV
  • SIP H-Bridge SiC MOSFET Power Module for On-Board Charger(OBC) in xEV
  • Compact Design for Low Total Module Resistance
  • Creepage and Clearance per IEC60664−1, IEC 60950−1
  • Module Serialization for Full Traceability
  • Lead Free, ROHS and UL94V−0 Compliant
  • Automotive Qualified per AEC−Q101 and AQG324

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NXVF6532M3TG01

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量产中

CAD Model

Pb

A

H

P

AUTOMOTIVE POWER MODULE16 40.10x21.90x4.50, 1.90P

829AA

NA

0

TUBE

72

No

Bridge

650

32

Automotive OBC

$15.6855

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可靠性数据

Die Related Summary Data

Device: NXVF6532M3TG01

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

32191536553

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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