受保护的功率 MOSFET,N 沟道,逻辑电平,带箝位,逻辑电平,2.6 A,52 V,带 ESD 防护

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NIF9N05CL 受保护的功率 MOSFET,2.6 A,52 V,N 沟道,逻辑电平,箝位 MOSFET,带 ESD 防护,采用 SOT-223 封装

  • Automotive and Industrial Markets
  • Internal Series Gate Resistance

  • Diode Clamp Between Gate and Source
  • ESD Protection - HBM 5000 V
  • Active Over-Voltage Gate to Drain Clamp
  • Scalable to Lower or Higher RDS(on)
  • Internal Series Gate Resistance
  • Pb-Free Packages are Available

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

V(BR)DSS Min (V)

ID Typ (A)

rDS(on) Max (mΩ)

PD Max (W)

Reference Price

NIF9N05CLT1

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

3

235

REEL

1000

N

N-Channel

52

2.6

125

1.69

Price N/A

More Details

NIF9N05CLT1G

Last Shipments

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

3

260

REEL

1000

N

N-Channel

52

2.6

125

1.69

Price N/A

More Details

NIF9N05CLT3

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

3

235

REEL

4000

N

N-Channel

52

2.6

125

1.69

Price N/A

More Details

NIF9N05CLT3G

Consult Sales Office

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

3

260

REEL

4000

N

N-Channel

52

2.6

125

1.69

Price N/A

More Details

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