Protected MOSFETs | MTP12N06EZL

TMOS Power FET N-Channel

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N-Channel Enhancement-Mode Silicon Gate

This advanced TMOS power FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a gate-to-source zener diode designed for 4 kV ESD protection (human body model).

  • ESD Protected
  • 4 kV Human Body Model
  • 400 V Machine Model
  • Avalanche Energy Capability
  • Internal Source-To-Drain Diode Designed to Replace External Zener Transient Suppressor-Absorbs High Energy in the Avalanche Mode

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