Protected MOSFETs | NCV8402AD

Dual Self-Protected N-Channel Power MOSFET

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NCV8402 is a two channel, three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments.

  • Switch a Variety of Resistive, Inductive and Capacitive Loads
  • Can Replace Electromechanical Relays and Discrete Circuits
  • Lamp Driver
  • Relay Driver

  • Automobiles

  • Short Circuit Protection
  • Thermal Shutdown with Automatic Restart
  • Integrated Clamp for Inductive Switching
  • ESD Protection
  • dV/dt Robustness
  • Analog Drive Capability (Logic Level Input)
  • AEC-Q101 Qualified
  • NCV Prefix for Automotive and Other Applications Requiring Site and Change Control

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NCV8402ADDR2G

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Pb

A

H

P

SOIC-8

751-07

1

260

REEL

2500

Y

N-Channel

42

2

165

1.62

$0.526

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可靠性数据

Die Related Summary Data

Device: NCV8402ADDR2G

Equivalent to wafer fab process: TMOS STD

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平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TMOS STD

6

8818554393

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Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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