8 A、600 V 超高速 II 代二极管
Obsolete
FFP08H60S 是一款超高速 II 代二极管,采用氮化硅钝化离子植入外延层平面结构。 该器件在各种开关电源及其他电源开关应用中用作续流/钳位二极管。 其低存储电荷和超高速软恢复特性可最大程度降低多种电源开关电路中的振铃和电气噪声,由此降低开关晶体管中的功耗。
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trr Max (ns)
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可靠性数据
Die Related Summary Data
Device: FFP08H60STU
Equivalent to wafer fab process: 3B
产品技术
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
3B
20
5701956337
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)