RF Transistors | NSVF6001SB6

射频晶体管，NPN 单，12 V，100 mA，fT = 6.7 GHz

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概览

此射频晶体管适用于低噪声放大器应用。CPH 封装具有卓越的散热特性，适用于高温环境。此射频晶体管经过了 AEC-Q101 认证且具有 PPAP 功能，适用于汽车应用。

  • Low Noise Amplifier
  • Automotive Radio Antenna
  • Automotive TV Antenna
  • DAB Antenna
  • High Current (IC = 100 mA)
  • Ultra miniature and thin 6 pin package
  • High Collector Dissipation (800 mW)
  • Pb-Free, Halogen Free and RoHS compliance
  • AEC-Q101 qualified and PPAP capable
  • High Gain : lS21el2 = 11 dB typ (f = 1 GHz)
  • High Cut-off Frequency : fT = 6.7 GHz typ

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|S21e| 2 Typ. (dB)

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参考价格

NSVF6001SB6T1G

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CAD Model

Pb

A

H

P

CPH-6

318BD

1

260

REEL

3000

No

NPN

0.1

12

90

180

0.8

5000

1.1

11

Price N/A

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可靠性数据

Die Related Summary Data

Device: NSVF6001SB6T1G

Equivalent to wafer fab process: SSD

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SSD

0

12833979437

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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