RF Transistors | NSVF6003SB6

射频晶体管，NPN 单，12 V，150 mA，fT = 7 GHz

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概览

此射频晶体管适用于低噪声放大器应用。CPH 封装具有卓越的散热特性，适用于高温环境。此射频晶体管经过了 AEC-Q101 认证且具有 PPAP 功能，适用于汽车应用。

  • Low Noise Amplifier

  • Car FM Radio
  • TV for Automotive

  • AEC-Q101 qualified and PPAP capable
  • Pb-Free, Halogen Free and RoHS compliance
  • High Current (IC = 150 mA)
  • Ultra miniature and thin 6 pin package
  • Large Collector Dissipation (800 mW)
  • High Gain (fT = 7 GHz typ)

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IC Continuous (A)

VCEO(sus) Min (V)

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fT Min (MHz)

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|S21e| 2 Typ. (dB)

Reference Price

NSVF6003SB6T1G

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Lifetime

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CAD Model

Pb

A

H

P

CPH-6

318BD

1

260

REEL

3000

N

NPN

0.15

12

100

180

0.8

7000

1.8

9

$0.1955

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可靠性数据

Die Related Summary Data

Device: NSVF6003SB6T1G

Equivalent to wafer fab process: SSD

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SSD

0

6889897810

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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