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50 mA, 20 V PNP RF Bipolar Junction Transistor is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.
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IC Continuous (A)
VCEO(sus) Min (V)
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NSVMMBTH81LT1G
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
F
PNP
0.05
20
60
~NA~
0.225
600
~NA~
~NA~
$0.0867
More Details
NSVMMBTH81LT3G
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
10000
F
PNP
0.05
20
60
~NA~
0.225
600
~NA~
~NA~
$0.0867
More Details
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可靠性数据
Die Related Summary Data
Device: NSVMMBTH81LT1G
Equivalent to wafer fab process: SST
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
SST
0
4654891639
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)