RF Transistors | NSVMMBTH81

50 mA, 20 V PNP RF Bipolar Junction Transistor

量产中

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概览

50 mA, 20 V PNP RF Bipolar Junction Transistor is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.

  • This product is general usage and suitable for many different applications.
  • RF Products
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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IC Continuous (A)

VCEO(sus) Min (V)

hFE Min

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|S21e| 2 Typ. (dB)

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参考价格

NSVMMBTH81LT1G

联系销售

量产中

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

No

PNP

0.05

20

60

~NA~

0.225

600

~NA~

~NA~

2.90 x 2.40 x 1.00

$0.0396

More Details

NSVMMBTH81LT3G

联系销售

量产中

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

10000

No

PNP

0.05

20

60

~NA~

0.225

600

~NA~

~NA~

2.90 x 2.40 x 1.00

$0.0396

More Details

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可靠性数据

Die Related Summary Data

Device: NSVMMBTH81LT1G

Equivalent to wafer fab process: SST

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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