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The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.
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Status
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
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Container Qty.
ON Target
Configuration
VRRM Min (V)
VF Max (V)
IRM Max (µA)
IO(rec) Max (A)
IFSM Max (A)
trr Max (ns)
Cj Max (pF)
Reference Price
1N5820
More Details
1N5820G
More Details
1N5820RL
Pb
A
H
P
Axial Lead-2
NA
0
REEL
1500
N
Single
20
0.475
2000
3
80
-
-
Price N/A
More Details
1N5820RLG
Pb
A
H
P
Axial Lead-2
NA
0
REEL
1500
N
Single
20
0.475
2000
3
80
-
-
Price N/A
More Details
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可靠性数据
Die Related Summary Data
Device: 1N5820G
Equivalent to wafer fab process: RECT
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
RECT
3
19108175705
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)