Schottky Diodes & Schottky Rectifiers | NSR02301MX4

200 mA, 30 V, Trench-based Schottky Diode in X4DFN2 (01005)

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概览

Schottky Diode optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in space saving micro-packaging ideal for space constrained applications.

  • Reverse Voltage and Current Protection
  • Clamping & Protection
  • Buck and Boost DC-DC Converters

  • Mobile Devices
  • Wearable Devices
  • Camera Photo Flash

  • Smallest Package Available (01005); 0.445mm x 0.24mm
  • 200 mA Continuous Forward Current
  • Low Forward Voltage Drop, VF = 350 mV (Typical) @ IF = 100 mA
  • Low Reverse Current, 25 µA (Typical) @ VR = 30 V
  • Low trr = 11 ns Typical
  • Low Capacitance, 19 pF (Typical)

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VF Max (V)

IRM Max (µA)

IO(rec) Max (A)

IFSM Max (A)

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NSR02301MX4T5G

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CAD Model

Pb

A

H

P

X4DFN-2

718AA

1

260

REEL

10000

N

Single

30

0.54

100

0.2

~NA~

11

~NA~

Price N/A

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可靠性数据

Die Related Summary Data

Device: NSR02301MX4T5G

Equivalent to wafer fab process: SSD

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SSD

0

6889897810

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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