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运用肖特基势垒原理,采用大面积金属-硅功率二极管。 该器件适用于低电压、高频率整流,或采用表面贴装的续流和极性保护二极管的应用,其中紧凑的尺寸和重量对系统至关重要。 此封装还是无引线 34 封装样式的易于使用的替代产品。 由于其尺寸小巧,因而适用于蜂窝电话和无绳电话、充电器、笔记本电脑、打印机、PDA 和 PCMCIA 卡等便携式和电池供电产品。 典型应用为 AC-DC 和 DC-DC 转换器、逆向电池保护和多个电源电压的“OR”运行,以及性能和尺寸至关重要的其他应用。
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MSL Temp (°C)
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Container Qty.
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VRRM Min (V)
VF Max (V)
IRM Max (µA)
IO(rec) Max (A)
IFSM Max (A)
trr Max (ns)
Cj Max (pF)
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MBR120LSFT1
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MBR120LSFT1G
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MBR120LSFT3
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MBR120LSFT3G
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可靠性数据
Die Related Summary Data
Device: MBR120LSFT1G
Equivalent to wafer fab process: RECT
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
RECT
3
19108175705
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)