Schottky Diodes & Schottky Rectifiers | MBRAF3200

200 V，3.0 A，肖特基整流器

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概览

该肖特基整流器运用肖特基势垒原理，采用大面积金属-硅功率二极管。先进几何结构具有带氧化物钝化以及金属覆盖触点的外延结构。该器件适用于低电压、高频率整流，或采用表面贴装的续流和极性保护二极管的应用，其中紧凑的尺寸和重量对系统至关重要。

  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Very High Blocking Voltage - 200 V
  • 150°C Operating Junction Temperature
  • Guard-Ring for Stress Protection
  • This is a Pb-Free Device

    Mechanical Characteristics:
  • Case: Epoxy, Molded, Epoxy Meets UL 94, V-0
  • Weight: 95 mg (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal
    Leads are Readily Solderable
  • Lead and Mounting Surface Temperature for Soldering Purposes:
    260°C Max. for 10 Seconds
  • Cathode Polarity Band
  • Device Meets MSL 1 Requirements
  • ESD Ratings: Machine Model = A
    Human Body Model = 1B

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MBRAF3200T3G

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CAD Model

Pb

A

H

P

SMA-FL

403AA

1

260

REEL

5000

N

Single

200

0.84

1000

3

100

-

-

$0.2499

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可靠性数据

Die Related Summary Data

Device: MBRAF3200T3G

Equivalent to wafer fab process: RECT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RECT

3

19108175705

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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