Schottky Diodes & Schottky Rectifiers | MBRAF3200
概览
该肖特基整流器运用肖特基势垒原理，采用大面积金属-硅功率二极管。先进几何结构具有带氧化物钝化以及金属覆盖触点的外延结构。该器件适用于低电压、高频率整流，或采用表面贴装的续流和极性保护二极管的应用，其中紧凑的尺寸和重量对系统至关重要。
- Small Compact Surface Mountable Package with J-Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Very High Blocking Voltage - 200 V
- 150°C Operating Junction Temperature
- Guard-Ring for Stress Protection
- This is a Pb-Free Device
Mechanical Characteristics: - Case: Epoxy, Molded, Epoxy Meets UL 94, V-0
- Weight: 95 mg (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds - Cathode Polarity Band
- Device Meets MSL 1 Requirements
- ESD Ratings: Machine Model = A
Human Body Model = 1B
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