Schottky Power Rectifier, Switch-mode, 20 A, 200 V

概览

The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

  • Highly Stable Oxide Passivated Junction
  • Very Low Forward Voltage Drop
  • Matched Dual Die Construction
  • High Junction Temperature Capability
  • High dv/dt Capability
  • Guardring for Stress Protection
  • Epoxy Meets UL94, VO at 1/8"
  • Electrically Isolated. No Isolation Hardware Required.
  • UL Recognized File #E69369

    Mechanical Characteristics:
  • Case: Epoxy, Molded
  • Weight: 1.9 grams (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
  • Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
  • Marking: B20200

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MBRF20200CT

已停产

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

50

No

Common Cathode

200

1

1000

20

150

-

-

-

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MBRF20200CTG

量产中

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

50

No

Common Cathode

200

1

1000

20

150

-

-

-

10.30 x 15.90 x 4.70

$0.8724

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