200 mA, 30 V, Trench-based Schottky Diode in X4DFN2 (01005)

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概览

Schottky Diode optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in space saving micro-packaging ideal for space constrained applications.

  • Reverse Voltage and Current Protection
  • Buck and Boost DC-DC Converters
  • Clamping & Protection
  • Mobile Devices
  • Wearable Devices
  • Camera Photo Flash
  • Smallest Package Available (01005); 0.445mm x 0.24mm
  • 200 mA Continuous Forward Current
  • Low Forward Voltage Drop, VF = 350 mV (Typical) @ IF = 100 mA
  • Low Reverse Current, 25 µA (Typical) @ VR = 30 V
  • Low trr = 11 ns Typical
  • Low Capacitance, 19 pF (Typical)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Configuration

VRRM Min (V)

VF Max (V)

IRM Max (µA)

IO(rec) Max (A)

IFSM Max (A)

trr Max (ns)

Cj Max (pF)

Reference Price

NSR02301MX4T5G

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Last Shipments

CAD Model

Pb

A

H

P

X4DFN-2

1

260

REEL

10000

N

Single

30

0.54

100

0.2

~NA~

11

~NA~

Price N/A

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