This device employs the Schottky Barrier principle in a large areametal−to−silicon power diode. State−of−the−art geometry featuresepitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for low voltage, high frequency rectification, oras free wheeling and polarity protection diodes.
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SBRC560TR
Obsolete
Pb
A
H
P
-
-
NA
0
DSFTP
6000
N
Single
60
0.78
150
5
100
-
-
Price N/A
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