Schottky Rectifier 5A, 60V, Bare Die Sale

Obsolete

概览

This device employs the Schottky Barrier principle in a large areametal−to−silicon power diode. State−of−the−art geometry featuresepitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for low voltage, high frequency rectification, oras free wheeling and polarity protection diodes.

  • Automotive

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Configuration

VRRM Min (V)

VF Max (V)

IRM Max (µA)

IO(rec) Max (A)

IFSM Max (A)

trr Max (ns)

Cj Max (pF)

Reference Price

SBRC560TR

CAD Model

Pb

A

H

P

-

-

NA

0

DSFTP

6000

N

Single

60

0.78

150

5

100

-

-

Price N/A

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