Silicon Carbide (SiC) Cascode JFETs | UHB100SC12E1BC3N
概览
The UHB100SC12E1BC3N contains an 9.4 mohm/1200V JFET half bridge in EB1 package. The SiC JFET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. This device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive. Advanced Ag sintering die attach technology gives the module superior thermal performance.
- EV Charging
- PV Inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
- EV Charger
- Industrial Power Supply
- Solar Inverter
- Industrial Motor
- On-resistance: RDS(on) = 9.4mohm (typ)
- Operating temperature: 150°C (max)
- Excellent reverse recovery: Qrr = 1000nC
- Low body diode voltage: V_FSD = 1.4V
- Low gate charge: Qg = 170nC
- Threshold voltage VG(th): 5V (Typ)
- Low intrinsic capacitance
- ESD protected: HBM class 2 and CDM class C3
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