安森美碳化硅（SiC）Combo-FET的推出是一次革新性的进步，将我们低RDS(on)的SiC JFET与Si MOSFET结合应用在一个紧凑的封装中。专为低频保护应用而设计，如电源单元（PSU）、AI数据中心机架的下游高压DC-DC转换器、固态断路器（SSCB）、电动汽车电池断开和浪涌保护等，SiC Combo-FET的使用能够帮助用户调节JFET栅极，以优化设计。而Si MOSFET的集成常开启（normally）的方案成立，与分立实现相比，所需尺寸减少超过 25%。
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Pb
A
H
P
1200
550
7.6
TO-247-4L
196
351
TO-247-4
NA
0
No
$51.8654
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Pb
A
H
P
750
588
5
TOLL
164
362
H-PDSO-F8 9.90x10.38x2.30, 1.20P
1
260
No
$39.0524
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Pb
A
H
P
750
588
5.3
TO-247-4L
164
362
TO-247-4
NA
0
No
$39.7723
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Active
Pb
A
H
P
750
344
8.4
TO-247-4L
75
230
TO-247-4
NA
0
No
$23.4794
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Pb
A
H
P
750
300
10
TO-247-4L
75
178
TO-247-4
NA
0
No
$19.7862
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