SiC combo-FETs represent a revolutionary advancement, combining our low RDS(on) SiC JFET with a Si MOSFET in a single, compact package. Specifically designed for low-frequency protection applications, such as Power Supply Units (PSUs), downstream high-voltage DC-DC converters for AI Data Center Racks, Solid-State Circuit Breakers (SSCBs), EV battery disconnects, and surge protection, these combo-FETs allow users to access the JFET gate for optimized design. The integration of the Si MOSFET ensures a normally-off solution, achieving a size reduction exceeding 25% compared to discrete implementations.
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VDS(max) (V)
≥
V
≤
V
ID(peak) (A)
≥
A
≤
A
Typical RDS(on)
≥
mΩ
≤
mΩ
Package
Qg (nC)
≥
C
≤
C
Output capacitance Coss (pF)
≥
F
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F
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CAD Models
Compliance
VDS(max) (V)
ID(peak) (A)
Typical RDS(on)
Package
Qg (nC)
Output capacitance Coss (pF)
Package Type
MSL Type
MSL Temp (°C)
ON Target
Reference Price
Active, New
Pb
A
H
P
1200
550
7.6
TO-247-4L
196
351
TO-247-4
NA
0
F
$51.8654
More Details
UG3SC120009K4S
Active, New
Pb
A
H
P
1200
550
7.6
TO-247-4L
196
351
TO-247-4
NA
0
F
$51.8654
More Details
Active, New
Pb
A
H
P
750
588
5
TOLL
164
362
H-PDSO-F8 9.90x10.38x2.30, 1.20P
1
255
F
$39.0524
More Details
UG4SC075005L8S
Active, New
Pb
A
H
P
750
588
5
TOLL
164
362
H-PDSO-F8 9.90x10.38x2.30, 1.20P
1
255
F
$39.0524
More Details
Active, New
Pb
A
H
P
750
588
5.3
TO-247-4L
164
362
TO-247-4
NA
0
F
$39.7723
More Details
UG4SC075006K4S
Active, New
Pb
A
H
P
750
588
5.3
TO-247-4L
164
362
TO-247-4
NA
0
F
$39.7723
More Details
Active, New
Pb
A
H
P
750
344
8.4
TO-247-4L
75
230
TO-247-4
NA
0
F
$23.4794
More Details
UG4SC075009K4S
Active, New
Pb
A
H
P
750
344
8.4
TO-247-4L
75
230
TO-247-4
NA
0
F
$23.4794
More Details
Active, New
Pb
A
H
P
750
300
10
TO-247-4L
75
178
TO-247-4
NA
0
F
$19.7862
More Details
UG4SC075011K4S
Active, New
Pb
A
H
P
750
300
10
TO-247-4L
75
178
TO-247-4
NA
0
F
$19.7862
More Details
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产品系列:
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可订购器件:
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