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Silicon Carbide (SiC) Combo JFETs | UG4SC075006K4S
概览
The UG4SC075006K4S "Combo-JFET" integrates both a 750V
SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L
package. This innovative approach allows users to create circuitry
that would enable a normally-off switch while leveraging the
benefits of a normally-on SiC JFET. These benefits include ultra-low
on-resistance (RDS(on)) to minimize conduction losses and the
exceptional robustness characteristic of a simplified JFET device
structure, making it capable of handling the high-energy switching
required in circuit protection applications. For switch-mode power
conversion application, this device provides separate access to the
JFET and MOSFET gates for improved speed control and ease of
paralleling multiple devices.
- Solid State / Semiconductor Circuit Breaker
- Solid state / Semiconductor Relay
- Battery Disconnects
- Surge Protection
- Inrush Current Control
- High power switch mode converters (>25kW)
- Circuit Breaker
- Battery Charger
- Solar
- Energy Storage System
- Industrial Power Supply
- Single digit RDS(on)
- Normally-off capability
- Improved speed control
- Improved parallel device operation (3+FETs)
- Operating temperature: 175°C (max)
- High pulse current capability
- Excellent device robustness
- Silver-sintered die attach for excellent thermal resistance
- short circuit rated
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