Silicon Carbide (SiC) Diodes | FFSB0465A

碳化硅（SiC）肖特基二极管650V 4A D2PAK封装

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概览

碳化硅肖特基二极管采用全新工艺技术，相较于硅基款，能够带来更加优越的开关性能和更高的可靠度。碳化硅没有反向恢复电流、不受温度影响的开关特性和出色的热性能，使其成为下一代功率半导体的不二选择，为系统带来更高的效率、更快的工作频率、更高的功率密度、更低的EMI，以及更小的系统尺寸和成本。

  • 电信
  • 云系统
  • 工业

  • 电信电源
  • 服务器电源
  • UPS / ESS
  • 太阳能

  • 最高结温175 °C
  • 浪涌电流容量大
  • 正温度系数
  • 无反向/正向恢复

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VRRM (V)

IF(ave) (A)

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FFSB0465A

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Pb

A

H

P

D2PAK2 (TO-263-2L)

418BK

1

260

REEL

800

N

D1

Single

650

4

1.75

38

200

Price N/A

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可靠性数据

Die Related Summary Data

Device: FFSB0465A

Equivalent to wafer fab process: SIC

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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