Silicon Carbide (SiC) Diodes | FFSB2065B-F085

汽车碳化硅 (SiC) 肖特基二极管，650 V

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碳化硅 (SiC) 肖特基二极管使用全新技术，能够提供卓越的开关性能，且比硅具有更高的可靠性。碳化硅的无逆向恢复电流、温度无关开关特性和卓越的热性能，使其成为下一代功率半导体产品。系统优点包括最高能效、更快的运行频率、提高的功率密度、降低的 EMI，以及减小的系统尺寸和成本。

  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters

  • PHEV-EV Onboard charger and DC -DC

  • Max Junction Temperature 175 oC
  • Avalanche Rated 94 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • AEC-Q101 Qualified and PPAP Capable

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FFSB2065B-F085

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D2PAK2 (TO-263-2L)

418BK

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260

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可靠性数据

Die Related Summary Data

Device: FFSB2065B-F085

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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