Silicon Carbide (SiC) Diodes | FFSD10120A

碳化硅肖特基二极管

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碳化硅肖特基二极管使用全新技术，相比硅材，可提供卓越的开关性能和更高的可靠性。 无反向恢复电流、随温度变化的开关特性，以及出色的热性能使碳化硅成为新一代功率半导体。 系统优势包括效率最高、运行频率更快、功率密度增加、电磁干扰减少、以及系统大小和成本降低。

  • Industrial

  • UPS / ESS
  • Solar
  • EV Charger

  • 最大结温 175 °C
  • 雪崩额定值 100 mJ
  • 高浪涌电流能力
  • 正温度系数
  • 易于并联

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FFSD10120A

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Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

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2500

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D1

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1200

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1.75

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200

$2.6397

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可靠性数据

Die Related Summary Data

Device: FFSD10120A

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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