Silicon Carbide (SiC) Diodes | FFSH1065B-F155

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L

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EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • Max Junction Temperature 175C
  • Avalanche Rated 51 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
  • Low Vf @ TJ:175 °C

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FFSH1065B-F155

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CAD Model

Pb

A

H

P

TO−247−2LD

340DC

NA

0

TUBE

450

No

D2

Single

650

10

1.7

42

40

$0.9676

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