Silicon Carbide (SiC) Diodes | FFSH20120A

碳化硅肖基特二极管

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概览

碳化硅 (SiC) 肖特基二极管使用全新技术，能够提供卓越的开关性能，且比硅具有更高的可靠性。碳化硅的无逆向恢复电流、温度无关开关特性和卓越的热性能，使其成为下一代功率半导体产品。系统优点包括最高能效、更快的运行频率、提高的功率密度、降低的 EMI，以及减小的系统尺寸和成本。

  • UPS
  • Solar Inverter

  • 最大结温 175 °C
  • 雪崩额定值 200 mJ
  • 高浪涌电流能力
  • 正温度系数
  • 易于并联
  • 无反向恢复/无正向恢复

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FFSH20120A

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Pb

A

H

P

TO-247-2

340CL

NA

0

TUBE

450

N

D1

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1200

20

1.75

135

200

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可靠性数据

Die Related Summary Data

Device: FFSH20120A

Equivalent to wafer fab process: SIC

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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