Silicon Carbide (SiC) Diodes | FFSP20120A

SiC 二极管，1200V，20A，TO-220-2

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概览

碳化硅 (SiC) 肖特基二极管使用全新技术，能够提供卓越的开关性能， 且比硅具有更高的可靠性。碳化硅的无逆向恢复电流、温度无关开关特性和卓越的热性能， 使其成为下一代功率半导体产品。系统优点包括最高能效、更快的运行频率、提高的功率密度、降低的 EMI，以及减小的系统尺寸和成本。

  • 最大节温 175°C
  • 雪崩额定值 200 mJ
  • 高浪涌电流容量
  • 正温度系数
  • 易于实现并联运行
  • 无反向恢复/无正向恢复

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FFSP20120A

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CAD Model

Pb

A

H

P

TO-220-2

340BB

NA

0

TUBE

800

Y

D1

Single

1200

20

1.75

135

200

$4.8408

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