Silicon Carbide (SiC) Diodes | FFSP3065A

碳化硅肖特基二极管

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碳化硅肖特基二极管没有开关损耗，由于采用新型半导体材料——碳化硅，提供比硅二极管更高的系统效率，支持更高的运行频率，并且有助于提高功率密度和减少系统尺寸/成本。 其高可靠性确保浪涌或过压状况下的稳健运行

  • PFC
  • Industrial Power
  • Solar
  • EV Charger
  • UPS
  • Welding

  • 最大结温 175 °C
  • 雪崩额定值 180 mJ
  • 高浪涌电流能力
  • 正温度系数
  • 无反向恢复/无正向恢复

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Case Outline

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MSL Temp (°C)

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Configuration

VRRM (V)

IF(ave) (A)

VF (Max)

IFSM (A)

IR (Max) (µA)

Reference Price

FFSP3065A

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Pb

A

H

P

TO-220-2

340BB

NA

0

TUBE

800

Y

D1

Single

650

30

1.75

150

200

$3.7559

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可靠性数据

Die Related Summary Data

Device: FFSP3065A

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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