碳化硅(SiC)肖特基二极管 - EliteSiC系列10A 1700V D1 TO-247-2L封装

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概览

EliteSiC系列肖特基二极管采用全新工艺技术,相较于硅,能够带来更加优越的开关性能和更高的可靠度。碳化硅没有反向恢复电流、不受温度影响的开关特性和出色的热性能,使其成为下一代功率半导体的不二选择,为系统带来更高的效率、更快的工作频率、更高的功率密度、更低的EMI,以及更小的系统尺寸和成本。

  • 开关模式电源(SMPS)

  • 辅助电源
  • 轨道牵引
  • EV Charger

  • Max Junction Temperature 175 °C
  • Avalanche Rated 156 mJ
  • High Surge Current Capacity
  • Low IR @ TJ:175 °C
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
  • Low Vf @ TJ:175 °C

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Package Type

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MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Family

Configuration

VRRM (V)

IF(ave) (A)

VF (Max)

IFSM (A)

IR (Max) (µA)

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NDSH10170A

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CAD Model

Pb

A

H

P

TO-247-2LD

NA

0

TUBE

450

F

D1

Single

1700

10

1.75

105

40

$4.4186

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