方案
By Technology
Silicon Carbide (SiC) Diodes | NDSH10170A
概览
EliteSiC系列肖特基二极管采用全新工艺技术，相较于硅，能够带来更加优越的开关性能和更高的可靠度。碳化硅没有反向恢复电流、不受温度影响的开关特性和出色的热性能，使其成为下一代功率半导体的不二选择，为系统带来更高的效率、更快的工作频率、更高的功率密度、更低的EMI，以及更小的系统尺寸和成本。
- 开关模式电源（SMPS）
- 辅助电源
- 轨道牵引
- EV Charger
- Max Junction Temperature 175 °C
- Avalanche Rated 156 mJ
- High Surge Current Capacity
- Low IR @ TJ:175 °C
- Positive Temperature Coefficient
- No Reverse Recovery / No Forward Recovery
- Low Vf @ TJ:175 °C
Tools and Resources
Product services, tools and other useful resources related to NDSH10170A
Buy/Parametrics Table
搜寻
Close Search
产品:
1
分享
排序方式
产品系列:
┗
可订购器件:
1
产品
NDSH10170A
Active
Pb
A
H
P
TO-247-2LD
NA
0
TUBE
450
F
D1
Single
1700
10
1.75
105
40
$4.4186
More Details
Show More
1-25 of 25
Products per page
Jump to :
1
Support on the go
Find and compare products, get support and connect with onsemi sales team.
Contact Sales
