Silicon Carbide (SiC) Diodes | NDSH10170A
概览
EliteSiC系列肖特基二极管采用全新工艺技术，相较于硅，能够带来更加优越的开关性能和更高的可靠度。碳化硅没有反向恢复电流、不受温度影响的开关特性和出色的热性能，使其成为下一代功率半导体的不二选择，为系统带来更高的效率、更快的工作频率、更高的功率密度、更低的EMI，以及更小的系统尺寸和成本。
- 开关模式电源（SMPS）
- 辅助电源
- 轨道牵引
- EV Charger
- Max Junction Temperature 175 °C
- Avalanche Rated 156 mJ
- High Surge Current Capacity
- Low IR @ TJ:175 °C
- Positive Temperature Coefficient
- No Reverse Recovery / No Forward Recovery
- Low Vf @ TJ:175 °C
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NDSH10170A
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Pb
A
H
P
TO-247-2LD
NA
0
TUBE
450
F
D1
Single
1700
10
1.75
105
40
$4.4186
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