安森美碳化硅（SiC）JFET是一种高性能、常开启型（normally-on）JFET晶体管，VDS-max范围为650V到1700V。提供高开关频率和低至4毫欧的超低导通电阻RDS (on)，所需芯片面积不到其他技术的一半。此外，低栅极电荷（Qg）得以进一步减少导通损耗和开关损耗。SiC JFET专为优化用于电源单元（PSU）和下游高压DC-DC转换，以应对未来AI数据中心机架的巨大功率需求。在电动汽车电池断开单元的应用中，通过使用基于SiC JFET的固态开关来替代多个组件，可提高运行效率和安全性。此外，SiC JFET还支持部分储能拓扑结构和固态断路器（SSCB）。
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产品系列:
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Active
Pb
A
H
P
1200
550
7.1
TO-247-4L
830
368
175
N
TO-247-4
NA
0
No
$47.5855
More Details
Active
Pb
A
H
P
1700
16
400
D2PAK-7L
30
22
175
N
D2PAK-7 / TO-263-7
1
255
No
$5.3999
More Details
Active
Pb
A
H
P
650
250
25
TO-247-3L
240
290
175
N
TO-247
NA
0
No
$15.2796
More Details
Active
Pb
A
H
P
650
72
80
TO-247-3L
75
94
175
N
TO-247
NA
0
No
$5.7599
More Details
Active
Pb
A
H
P
1200
185
35
TO-247-3L
235
180
175
N
TO-247
NA
0
No
$23.7994
More Details
Active
Pb
A
H
P
1200
90
66
TO-247-3L
114
100
175
N
TO-247
NA
0
No
$12.9063
More Details
Active
Pb
A
H
P
1200
85
70
TO-247-3L
116
100
175
N
TO-247
NA
0
No
$11.893
More Details
Active
Pb
A
H
P
750
588
4.3
TOLL
400
364
175
N
H-PDSO-F8 9.90x10.38x2.30, 1.20P
1
260
No
$35.4791
More Details
Active
Pb
A
H
P
750
588
4.8
TO-247-4L
400
364
175
N
TO-247-4
NA
0
No
$36.1858
More Details
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