Silicon Carbide (SiC) JFETs | UF3N170400B7S

Silicon Carbide (SiC) JFET - EliteSiC, 400 mohm, 1700V, D2PAK-7L

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The UF3N170400B7S is a 1700V, 400 mohm high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.

  • Over Current Protection Circuits
  • DC-AC Inverters
  • Switch mode power supplies
  • Power factor correction modules
  • Motor drives
  • Induction heating

  • Circuit Breaker
  • Battery Charger
  • Solar
  • Energy Storage System
  • Industrial Power Supply

  • Operating temperature: 175°C (max)
  • Extremely fast switching not dependent on temperature
  • Low gate charge and intrinsic capacitance
  • RoHS compliant

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UF3N170400B7S

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Pb

A

H

P

D2PAK-7 / TO-263-7

418BA

1

255

REEL

800

F

1700

16

400

D2PAK-7L

30

22

175

N

$5.3999

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