我们的SiC MOSFET产品高速且坚固,并具备效率高、尺寸小、成本低的系统优势。

MOSFET是指具有绝缘栅极的金属氧化物半导体场效应晶体管(MOS管)。这些场效应晶体管通常由可控氧化硅制成,而SiC MOSFET是由碳化硅而不是硅制成的。

与硅MOSFET相比,选择SiC MOSFET有许多优势,例如开关频率更高。在使用 SiC MOSFET 模块时,也无需担心高温开发的问题,因为这些器件即使在高温条件下也能高效工作。此外,使用SiC MOSFET时,由于所有元件(电感器、滤波器等)的尺寸都更小,因此整体产品尺寸也更紧凑。

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Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

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MSL Type

MSL Temp (°C)

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CAD Model

Pb

A

H

P

M3P

1200

74

14

329

262

175

D2PAK7 (TO-263-7L HV)

1

260

F

$19.8363

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Pb

A

H

P

M2

650

145

12

283

424

175

D2PAK7 (TO-263-7L HV)

1

245

F

$16.0441

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Pb

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H

P

M2

900

112

20

200

295

175

D2PAK7 (TO-263-7L HV)

1

245

Y

$16.2817

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Pb

A

H

P

M1

1200

98

20

220

258

175

D2PAK7 (TO-263-7L HV)

1

245

Y

$22.1454

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Pb

A

H

P

M3S

1200

72

22

151

146

175

D2PAK7 (TO-263-7L HV)

1

245

F

$11.4962

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Pb

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H

P

M3S

650

70

23

69

153

175

D2PAK7 (TO-263-7L HV)

1

260

F

$5.8467

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Pb

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H

P

M2

650

106

19

164

278

175

D2PAK7 (TO-263-7L HV)

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260

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$12.4758

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Pb

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H

P

M1

1700

81

28

200

200

175

D2PAK7 (TO-263-7L HV)

1

245

F

$26.6721

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Pb

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H

P

M3S

1200

77

29

107

106

175

D2PAK7 (TO-263-7L HV)

1

260

F

$5.9251

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Pb

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H

P

M3S

650

52

32

55

113

175

D2PAK7 (TO-263-7L HV)

1

260

F

$4.2206

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Pb

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H

P

M3S

1200

57

40

75

80

175

D2PAK7 (TO-263-7L HV)

1

260

F

$5.2524

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Pb

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H

P

M1

1200

60

40

106

139

175

D2PAK7 (TO-263-7L HV)

1

245

Y

$11.8992

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Pb

A

H

P

M2

650

62

31

105

168

175

D2PAK7 (TO-263-7L HV)

1

245

F

$6.3358

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Pb

A

H

P

M2

650

46

44

74

133

175

D2PAK7 (TO-263-7L HV)

1

</