这些产品被设计成快速和强固的,包括从高能效到减少系统尺寸和成本的系统优势。

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Blocking Voltage BVDSS (V)

V

V

ID(max) (A)

A

A

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

nC

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pF

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Product Groups:

87

Orderable Parts:

87

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Product Groups:

87

Orderable Parts:

87

Product Group

状况

ECAD Models

Compliance

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Package Type

MSL Type

MSL Temp (°C)

ON Target

Pricing ($/Unit)

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SiC MOSFET 1200 V 14 mohm M3P Series in D2PAK-7L package

Active

Pb

A

H

P

M3P

1200

74

14

329

262

175

D2PAK7 (TO-263-7L HV)

1

260

F

$32.9192

More Details

Silicon Carbide (SiC) MOSFET - 12 mohm, 650 V, M2, D2PAK−7L

Active

Pb

A

H

P

M2

650

145

12

283

424

175

D2PAK7 (TO-263-7L HV)

1

245

F

$23.9251

More Details

Silicon Carbide MOSFET, N‐Channel, 900V, 20 mΩ, D2PAK−7L

Active

Pb

A

H

P

M2

900

112

20

200

295

175

D2PAK7 (TO-263-7L HV)

1

245

Y

$22.701

More Details

Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, D2PAK−7L

Active

Pb

A

H

P

M1

1200

98

20

220

258

175

D2PAK7 (TO-263-7L HV)

1

245

Y

$30.4649

More Details

Silicon Carbide (SiC) MOSFET - 22 mohm, 1200 V, M3S, D2PAK-7L

Active

Pb

A

H

P

M3S

1200

58

22

148

148

175

D2PAK7 (TO-263-7L HV)

1

245

F

$23.5594

More Details

Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK−7L

Active

Pb

A

H

P

M2

650

106

19

164

278

175

D2PAK7 (TO-263-7L HV)

1

260

F

$13.813

More Details

SiC MOSFET 1700 V 28 mohm M1 Series in D2PAK-7L package

Active

Pb

A

H

P

M1

1700

81

28

200

200

175

D2PAK7 (TO-263-7L HV)

1

245

F

$29.9993

More Details

Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, D2PAK−7L

Active

Pb

A

H

P

M1

1200

60

40

106

139

175

D2PAK7 (TO-263-7L HV)

1

245

Y

$13.6045

More Details

Silicon Carbide (SiC) MOSFET - 31 mohm, 650 V, M2, D2PAK−7L

Active

Pb

A

H

P

M2

650

62

31

105

168

175

D2PAK7 (TO-263-7L HV)

1

245

F

$8.1011

More Details

Silicon Carbide (SiC) MOSFET - 44 mohm, 650 V, M2, D2PAK−7L

Active

Pb

A

H

P

M2

650

46

44

74

133

175

D2PAK7 (TO-263-7L HV)

1

260

F

$7.9465

More Details

Silicon Carbide MOSFET, N‐Channel, 900 V, 60 mΩ, D2PAK−7L

Active

Pb

A

H

P

M2

900

44

60

88

115

175

D2PAK7 (TO-263-7L HV)

1

245

Y

$7.521

More Details

Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, D2PAK−7L

Active

Pb

A

H

P

M1

1200

30

80

56

79

175

D2PAK7 (TO-263-7L HV)

1

245

Y

$7.3439

More Details

Silicon Carbide MOSFET, N‐Channel, 1200 V, 160 mΩ, D2PAK−7L

Active

Pb

A

H

P

M1

1200

19.5

160

33.8

50.7

175

D2PAK7 (TO-263-7L HV)

1

245

Y

$5.4102

More Details

Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL

Active

Pb

A

H

P

M2

650

73

33

105

162

175

H-PSOF8L 9.90x11.68, 1.20P

1

260

F

$7.3332

More Details

Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, Bare Die

Lifetime

Pb

A

H

P

M1

1200

60

20

170

266

175

-

NA

0

N

$21.6391

More Details

Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, Bare Die

Active

Pb

A

H

P